Superlattice parameters for optimum absorption in InAs/InxGa1-xSb superlattice infrared detectors
Identifieur interne : 01B964 ( Main/Repository ); précédent : 01B963; suivant : 01B965Superlattice parameters for optimum absorption in InAs/InxGa1-xSb superlattice infrared detectors
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Abstract
The linear absorption coefficient of InAs/InxGa1-xSb superlattices is optimized with respect to layer widths, indium content, substrate type and substrate orientation, interface type, and choice of buffer layers based on a model envelope-function approach (EFA) involving the solution of a 6×6 EFA Hamiltonian (heavy, light, and conduction bands) for wave functions and subband energies. Free-standing superlattices as well as superlattices matched to a number of substrates are considered. In general, increasing the indium mole content from 0 to 0.4 doubles the magnitude of absorption. Changing the substrate orientation from [001] to [111] significantly increases absorption in all cases studied due to the increased heavy-hole mass and the larger InAs-conduction-band-InGaSb-valence-band offset in the [111] direction. The use of an In0.4Ga0.6Sb substrate leads to higher absorption because all the beneficial effects of strain are placed in the InAs layer, which is more sensitive to strain than is the InGaSb layer. The larger valence-conduction-band offset for InSb than for GaAs interfaces also leads to higher absorption. The model results agree best with available data when a 100 meV InAs-conduction-band-GaSb-valence-band offset is used. Specific superlattice parameters that optimize absorption for free-standing superlattices on GaSb at three cutoff wavelengths are proposed. © 1995 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Superlattice parameters for optimum absorption in InAs/In<sub>x</sub>Ga<sub>1-x</sub>Sb superlattice infrared detectors</title><author><name sortKey="Heller, Eric R" uniqKey="Heller E">Eric R. Heller</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Wright Laboratory (WL/MLPO), Wright-Patterson Air Force Base, Dayton, Ohio 45433-7707</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Ohio</region></placeName><wicri:cityArea>Wright Laboratory (WL/MLPO), Wright-Patterson Air Force Base, Dayton</wicri:cityArea></affiliation></author><author><name sortKey="Fisher, Kent" uniqKey="Fisher K">Kent Fisher</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Wright Laboratory (WL/MLPO), Wright-Patterson Air Force Base, Dayton, Ohio 45433-7707</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Ohio</region></placeName><wicri:cityArea>Wright Laboratory (WL/MLPO), Wright-Patterson Air Force Base, Dayton</wicri:cityArea></affiliation></author><author><name sortKey="Szmulowicz, Frank" uniqKey="Szmulowicz F">Frank Szmulowicz</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Wright Laboratory (WL/MLPO), Wright-Patterson Air Force Base, Dayton, Ohio 45433-7707</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Ohio</region></placeName><wicri:cityArea>Wright Laboratory (WL/MLPO), Wright-Patterson Air Force Base, Dayton</wicri:cityArea></affiliation></author><author><name sortKey="Madarasz, Frank L" uniqKey="Madarasz F">Frank L. Madarasz</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Optical Science and Engineering Program and Center for Applied Optics, University of Alabama at Huntsville, Huntsville, Alabama 35899</s1><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Alabama</region></placeName><wicri:cityArea>Optical Science and Engineering Program and Center for Applied Optics, University of Alabama at Huntsville, Huntsville</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">95-0236508</idno><date when="1995-06-01">1995-06-01</date><idno type="stanalyst">PASCAL 95-0236508 AIP</idno><idno type="RBID">Pascal:95-0236508</idno><idno type="wicri:Area/Main/Corpus">01CB61</idno><idno type="wicri:Area/Main/Repository">01B964</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. Appl. Phys.</title><title level="j" type="main">Journal of Applied Physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term><term>Experimental study</term><term>Gallium antimonides</term><term>Indium antimonides</term><term>Indium arsenides</term><term>Infrared radiation</term><term>Phase-matching</term><term>Photodetectors</term><term>Strains</term><term>Superlattices</term><term>Valence bands</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>7866F</term><term>8560G</term><term>7320D</term><term>Superréseau</term><term>Indium arséniure</term><term>Indium antimoniure</term><term>Gallium antimoniure</term><term>Photodétecteur</term><term>Rayonnement IR</term><term>Spectre absorption</term><term>Déformation mécanique</term><term>Bande valence</term><term>Adaptation phase</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The linear absorption coefficient of InAs/In<sub>x</sub>Ga<sub>1-x</sub>Sb superlattices is optimized with respect to layer widths, indium content, substrate type and substrate orientation, interface type, and choice of buffer layers based on a model envelope-function approach (EFA) involving the solution of a 6×6 EFA Hamiltonian (heavy, light, and conduction bands) for wave functions and subband energies. Free-standing superlattices as well as superlattices matched to a number of substrates are considered. In general, increasing the indium mole content from 0 to 0.4 doubles the magnitude of absorption. Changing the substrate orientation from [001] to [111] significantly increases absorption in all cases studied due to the increased heavy-hole mass and the larger InAs-conduction-band-InGaSb-valence-band offset in the [111] direction. The use of an In<sub>0.4</sub>Ga<sub>0.6</sub>Sb substrate leads to higher absorption because all the beneficial effects of strain are placed in the InAs layer, which is more sensitive to strain than is the InGaSb layer. The larger valence-conduction-band offset for InSb than for GaAs interfaces also leads to higher absorption. The model results agree best with available data when a 100 meV InAs-conduction-band-GaSb-valence-band offset is used. Specific superlattice parameters that optimize absorption for free-standing superlattices on GaSb at three cutoff wavelengths are proposed. © 1995 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. Appl. 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Free-standing superlattices as well as superlattices matched to a number of substrates are considered. In general, increasing the indium mole content from 0 to 0.4 doubles the magnitude of absorption. Changing the substrate orientation from [001] to [111] significantly increases absorption in all cases studied due to the increased heavy-hole mass and the larger InAs-conduction-band-InGaSb-valence-band offset in the [111] direction. The use of an In<sub>0.4</sub>Ga<sub>0.6</sub>Sb substrate leads to higher absorption because all the beneficial effects of strain are placed in the InAs layer, which is more sensitive to strain than is the InGaSb layer. The larger valence-conduction-band offset for InSb than for GaAs interfaces also leads to higher absorption. The model results agree best with available data when a 100 meV InAs-conduction-band-GaSb-valence-band offset is used. Specific superlattice parameters that optimize absorption for free-standing superlattices on GaSb at three cutoff wavelengths are proposed. © 1995 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C20D</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>8560G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7320D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Superréseau</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Superlattices</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Indium antimoniure</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Indium antimonides</s0><s2>NK</s2></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Gallium antimoniure</s0><s2>NK</s2></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Gallium antimonides</s0><s2>NK</s2></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Photodétecteur</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Photodetectors</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Rayonnement IR</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Infrared radiation</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Spectre absorption</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Absorption spectra</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Déformation mécanique</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Strains</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Bande valence</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Valence bands</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Adaptation phase</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Phase-matching</s0></fC03><fN21><s1>136</s1></fN21><fN47 i1="01" i2="1"><s0>9509M0763</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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